As part of equipment delivery available elaboration processes on the base of Application Lab. It’s a complex technology platform that enables implementation of a wide class of problems in the development of advanced semiconductor devices in the field of micro-, opto-and nanoelectronics.

Equipment of Application Lab:

• MBE System for III-Nitride growth STE3N2
• Electron-beam deposition systems (PVD) STE EB71, STE EB65G
• Plasma-chemical etching system (PE) STE ICPe68L
• PECVD system STE ICPd81L
• Rapid thermal annealing system STE RTA100, STE RTP150
• Magnetron sputtering system STE MS105
• Arsenide MBE system STE75
• Area of photolithography (manufacture of metal and photoresistive masks)
• Complex control and measuring equipment

Molecular-Beam Epitaxy

MBE is one of the first revolutionary technologies which allows to control the structure of material at the nanoscale. It provides a unique opportunity to create semiconductor nanoheterostructures on a wide range of materials to control the thickness of the grown layers at the atomic level.

The final product: nanoheterostructures based on A³B⁵, A²B⁶ , A³N for the manufacture of electronic components and devices of nano-, micro-and optoelectronics.

SemiTEq JSC produces MBE Systems of the following types:

• Specialized systems for wide band compounds growth based on III Nitrides
• Systems for growth of traditional systems of materials А³В⁵, А²В⁶  or their combinations

Wafer processing

Methods for group processing of semiconductor chips on a wafer, the substrate, the heterostructure.

• Processes of plasma-chemical etching in a combined capacitive and inductive plasma discharge
• Processes of plasma-chemical deposition of dielectric (SiNx, SiO ₂ , etc.) in the plasma inductive discharge
• Electron-beam and magnetron sputtering of high-quality thin-film compositions in ultra high vacuum
• Rapid thermal annealing of semiconductor wafers in an inert atmosphere

The final product: Key processes for precision deposition and etching of metal and dielectric thin films to create a barrier, insulating layers, and other semiconductor devices, as well as for other applications (deposition, etching, sputtering).