STE ICP200E Automated system for plasma chemical etching in combined RIE and ICP plasma condition
System completely utilizes all necessary features of controlled plasma etching processes for semiconductors, dielectric and metal films. It is suitable for both chlorine and fluorine chemistry. STE ICP200E allows two types of plasma excitation: capacitive (cooled substrate electrode) and inductive (planar spiral ICP electrode).
Upgraded smaller reactor volume with optimized gas supply system allows to improve significantly the uniformity and reproducibility of the process as well as reducing the pumpdown time. A renewed reactor is optimal for etching recipe with the fast change of process gases (Bosch-process). Convenient routine maintenance of the system became easier provided due to a simple access to all internal components. Special bottom electrode design provides efficient helium cooling and wafer temperature control for etching processes.
The system allows combination of two modes of plasma chemical etching: reactive ion etching and etching in inductively coupled plasma in a wide process parameters window. RF generators are auto matically matched, thus ensuring stable plasma burning mode within the wide range of power values. System design provides wide opportunities for its configuration to solve individual customer tasks.