STE RTA100 Rapid Thermal Annealing System

STE RTA100 Rapid thermal annealing system

STE RTA100 systems are specially designed for short-time annealing of semiconductor wafers with temperatures up to 1000°C in inert atmosphere. Systems are widely used for ohmic contact annealing in production lines for manufacturing of electronic devices based on A3B5 semiconductor compounds.

SYSTEM CAPACITY

1×Ø100mm

REACTOR

Heater based on halogen lamps

Graphite or quartz heat-compensating table

Ultimate pressure <10Torr

Max heating temperature up to 1000°C

Temperature control by thermocouple and IR pyrometer

PROCESS CONTROL

Process automatization

Programming and storage of technological recipes

Heating uniformity ±2%
Max heating rate:
-30°C/sec with graphite table
-150°C/sec with quartz table
High run-to-run reproducibility
Programming of the multi-stage anneling process

Ultimate pressure in the process chamber, Torr

<10;

<5×10^-3 (Оption)

Pumping speed, m³/h

5

Water cooling of reactor walls

Yes

Max. wafer diameter, mm

100

Max. heating rate without graphite holder, ^°С/s

200

Max. heating rate with graphite holder, ^°С/s

40

Max. heating temperature, ^°С

1000

Heating uniformity for 100 mm wafer, %

±2

Annealing in vacuum

Not available

Annealing in oxygen

Not available

Quantity of thermocouples, pcs.

2

Optical pyrometer

Оption

Full automation of annealing process

Yes