STE ICP200 is a versatile platform intended for wide range of plasma-chemical etching and deposition in capacitive, inductively coupled and combined plasma.

Platform implements all modern features of controlled plasma etching of semiconductors, dielectric and metal films. Reactor design is optimized for etching recipes with the fast change of process gases (Bosch-process).

Special working table design provides efficient thermal transfer due to helium blanket. 

Flexible software capabilities allow to implement modern technological processes, including deposition and etching without the semiconductor structure damaging.