Application results of SemiTEq STE ICP series are represented below.

Deep Plasma Etching of Quartz 

• Operating Environment: SF₆/О₂; CF₄/О₂; C₄F₈/О₂
• Inductively coupled plasma (ICP) + capacitive plasma
• Mask: Cr, Ni, Cu
• Selectivity to the mask: 50:1
• Etching rate: 0,65 mkm/min

 

Deep Plasma Etching of SiC

• Operating Environment: SF₆/Ar/O₂
• Inductively coupled plasma (ICP) + capacitive plasma
• Mask: Cr, Ni
• Selectivity to the mask: 50:1
• Etching rate: 1 mkm/min

VECSEL technology based on ICP etching of GaAs/AlGaAs heterostructure

 developed by Quantum-well structures Lab of Ioffe Physical Technical University (M.Zadiranov, PhD, After-Growth Processing Group)

• Operating Environment: BCl₃/Ar
• Inductively coupled plasma (ICP) + capacitive plasma
• Mask: photoresist
• Selectivity to the mask: 15:1
• Etching rate: 1 mkm/min

Etching process interferometric control
Laser interferometer installed on the STE ICP68L allows to track the dynamics of the etching process and determine the end of the process

 

Low-temperature plasma deposition of Si₃N₄ 

Operating Environment: SiH₄/Ar/N₂
Types of plasma used in the process: inductively coupled plasma (ICP) + capacitive plasma
Temperature: 70°C
Growth rate: 10-70 nm/min
Deposition uniformity on wafer ∅100 mm: 5 %
Without ammonia technology