SemiTEq - SemiTEq — МВЕ STE3526: Hybrid heterostructures growth with III-V/II-VI heterovalent interface

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Application Lab STE EB71: E-beam evaporation results Sub-μm Gate technology STE ICP: Plasma etching and PECVD MBE STE3526: MBE growth of laser heterostructures МВЕ STE3526: Hybrid heterostructures growth with III-V/II-VI heterovalent interface MBE STE3N: Characteristics of III-Nitrides growth Heterostructures based on GaAs	МВЕ STE3526: Hybrid heterostructures growth with III-V/II-VI heterovalent interface MBE group of Professor Sergey Ivanov at the Ioffe Physical Technical Institute[1] operates with two-reactor MBE complex STE3526 and obtain the world class results. MBE growth of coherent heterovalent AlSb/InAs/(Zn,Mn)Te quantum wells with magnetized two-dimensional electron gas. Experimental evidences of giant Zeeman effect for 2D electrons in the InAs QW have been obtained via studies of spin-polarized photocurrents Ya.V. Terent’ev et al., APL 99, 072111 (2011) AlGaAs/GaAs/ZnSe/(Zn)Mn(S)Se double quantum wells for spin injection. MBE formation of neutral & thermodynamically equilibrium GaAs/ZnSe heterovalent interface. Initiation of ZnSe growth on GaAs (2x4)As surface decorated by a background Se flux - (2x1)As&Se RHEED pattern. I.V. Sedova et al., Int. Conf. MBE 2012, Nara, Japan, (2012) 60% of tunneling spin-injection from ZnMnSe to double GaAs QWs has been demonstrated by magnetoluminescence studies. F. Liaci et al., phys. stat. sol. (c) 9, 1790 (2012) [1] Ioffe Physical Technical Institute of Russian Academy of Sciences (RAS) is one the largest institutions in Russia for R&D in semiconductor physics and technology.