STE ICP200D Automated PECVD System of dielectric films
Upgraded smaller reactor volume with optimized gas supply system allows to improve significantly the uniformity and reproducibility of the process as well as reducing the pumpdown time.
Convenient routine maintenance of the system became easier provided due to a simple access to all internal components. Special bottom electrode design provides precise wafer heating control by IR Pyrometer for PECVD.
Flat ICP source with automatic matching unit is used for plasma generation. Wafers are placed onheated table-electrode, where either RF (13,56 MHz) or LF (300÷500 kHz) bias voltage up to 600Wcan be applied. Use of low frequency potential on heating table during ICP mode ensures additional possibility to adjust dielectric films tension during deposition process.