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STE35 New improved three-chamber MBE system for conventional semiconductors growth of A3B5 and A3N

STE35 is a modern technological platform for precise growth of epitaxial layers on wafers with diameter of 2”, 3”, 100 mm, aswell as three 2” wafers on the same platen. STE35 MBE system is intended for R&D activities and pilot production of epitaxialheterostructures in “Lab-to-Fab” mode in InAlGaAsSb or InGaAlN systems. STE35 was developed by SemiTEq as a result of morethan 25 years experience of our key MBE experts. Optimal growth geometry allows to achieve high excellence thickness and composition uniformity on ∅100mm wafer.

Additionaluniformity optimization is possible due to changing source-to-substrate distance (unique vertical movement of the wafer andheater at the same time). STE35 is a three chamber UHV system including individually pumped growth chamber, buffer/ outgassing chamber for pregrowthpreparation and load-lock chamber. All the chambers connected through vacuum gates and common semi-automaticwafer transfer system. The growth process is controlled by automation system based on original software. It allows to controlprocess manually or in auto mode using previously written recipe.

• growth chamber with a vertical growth geometry pumped by Ion pump/Cryopump for conventional III-Vs or TMP/Cryopumpfor III-Nitrides, sublimation pump
• 10×63 CF ports for effusion cells with shutters, 1 central 63 CF (preferable for NH3 in III-N version) and up to 3×40 CF extraports without shutters for V-group material valve crackers or gas source (Si2H4, etc.); pyrometer or laser interferometry ports
• all effusion cells are visible through several viewports on the growth chamber
• single LN2 cryopanel, effectively surrounding the growth volume, large surface for effective pumping of NH3 in a III-N version
• growth manipulator heating element based on PBN/PG/PBN, providing high heating uniformity and fast up and down dynamic
• maximum substrate temperature up to 1200°С in III-N version (Ti back coating of the substrate)
• in-situ monitoring tools: RHEED, IR pyrometer, mass-spectrometer and laser reflectometry (for III-Nitrides growth)
• retractible BFM for direct fluxes measurement
• preparation chamber with storage cassette for wafer holders and wafers bakeout stage, special port for H2 passivation
• load lock chamber with storage cassette for (up to 8 pcs.) wafer holders with quick access door equipped with glove box
• set of substrate holders
• bakeout system till 200°C, without hot spot formation
• control electronics and vacuumeters
• process control system based on original software

• “lab to fab” ideology, allowing carrying out activities from fundamental research to pilot production of heterostructures
• special effusion cells for Al (cold lip) for stable operation and Ga (hot lip) for obtaining of structures with low density of oval defects
• sufficient tools for in-situ monitoring of growth process in basic configuration
• specially designed growth manipulator, providing high temperature uniformity and heating/cooling rate dynamic
• rapid process start up due to intensive technological support
• simple System operation and regular technical maintenance

Ultimate residual vacuum in growth chamber

after bakeout

<5·10-11 Torr

Max. diameter of wafer

100 mm or 3х2” block

“Effusion cell to wafer” distance

135÷210 mm

Effusion cells shutters design

rotary mechanism based on magnetically

couplet rotary motion with non-impact

pneumatic drive

Material of shutters blades

tantalum (standard),

molybdenum, PBN — optional

Design of growth manipulator heating element

PBN/PG/PBN

Max. process temperature of growth

manipulator, not less

900°С 
(1100°C for III-Nitrides in PA-GaN version)

Temperature of wafer degassing in preparation

chamber, not less

650°С

Bakeout temperature of growth chamber,

not less

200°С

Ion pumps capacity:

– growth chamber

– preparation chamber

– load lock

800 l/s

500 l/s

300 l/s