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STE3526 Two-reactor MBE System for growth of hybrid heterostructures А3В5/А2В6
Two-reactor STE3526 MBE System is specially designed for growth of hybrid heterostructures А3В5/А2В6 taking into account all specific of MBE growth of these material systems. STE3526 is intended for R&D activities and pilot production of epitaxial nanostructures on the base of wide band А2В6 materials (Cd(Zn)Se/ZnMgSSe etc.) using of high-quality GaAs buffer layers, previously grown in А3В5-reactor. The specific feature of the System is providing of ultra-pure UHV transport of wafers from А3В5-reactor to А2В6 one avoiding uncontrolled contaminations of GaAs growth interface.
• “lab to fab” ideology, allowing carrying out activities from fundamental research to pilot production of heterostructures • special effusion cells for Al (cold lip) for stable operation and Ga (hot lip) for obtaining of structures with low density of oval defects • valved cracker cells for V and VI group materials • sufficient tools for in-situ monitoring of growth process in basic configuration • specially designed growth manipulator, providing high temperature uniformity and heating/cooling rate dynamic • rapid process start up due to intensive technological support • simple System operation and regular technical maintenance
Ultimate residual vacuum in growth chamber
after bakeout
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<5·10-11 Torr
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Max. diameter of wafer
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100 mm or 3х2” block
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“Effusion cell to wafer” distance
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135÷210 mm
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Effusion cells shutters design
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rotary mechanism based on magnetically
couplet rotary motion with non-impact
pneumatic drive
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Material of shutters blades
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tantalum (standard),
molybdenum, PBN — optional
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Design of growth manipulator heating element
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PBN/PG/PBN
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Max. process temperature of growth
manipulator, not less
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900°С
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Temperature of wafer degassing in preparation
chamber, not less
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650°С
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Bakeout temperature of growth chamber,
not less
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200°С
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Ion pumps capacity:
– growth chamber
– preparation chamber
– load lock
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800 l/s
500 l/s
300 l/s
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