Molecular-Beam Epitaxy Systems (MBE)
Molecular-Beam Epitaxy Systems of STE series are designed for wide range А3В5, wide band А2В6 compounds and А3N semiconductor compounds growth, and is made with consideration to latest achievements in the field of molecular beam epitaxy of conventional semiconductors systems. MBE systems can be employed for fundamental and applied research, R&D activities of А3В5/А2В6 and A3N epitaxial structures. Those are modern technological platforms for precise growth of epitaxial layers on wafers with diameter of 2”, 3” or 100 mm.
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