The symposium is organized by the Ioffe Physical-Technical Institute of Russian Academy of Sciences. It is a fourth symposium in a biannual series focusing specifically on growth of III-Nitride materials, nanostructures and device structures started in 2006 (Linköping, Sweden), continued in 2008 (Izu, Japan) and 2010 (Montpellier, France).

Symposium topics

Bulk growth: AlN, GaN, InN
Epitaxial growth techniques
Ternary and quaternary alloys
III-N nanostructures Defect control and surface effects
Optical and electrical properties
III-N DMS and spin-related phenomena
Devices: FETs, LEDs, and lasers