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2001-2002
Carried out deep modernization of MBE systems, produced in the USSR.
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2003-2004
Developed EPN3 MBE System, intended for growth of III-Nitrides
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2005-2006
Successfully completed tests of MBE experimental model. New STE System provided growth of nanoheterostructures based on compounds A3B5 and Si-Ge. Serial MBE System production was begun.
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2006-2007
Produced first models of equipment for wafer processing: plasma-chemical etching, electron-beam deposition, thermal annealing
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2007-2008
Produced new MBE STE3532 System, configured for A3B5 growth
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2008-2009
Designed and produced first two-reactor STE3526 system for growth of hybrid nanoheterostructures A3B5/A2B6 considering the latest achievements in these materials systems
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2009-2010
RUSNANO OJSC approved infrastructure project with SemiTEq JSC participation. SemiTEq JSC concluded contract with one of India's leading laboratories MO - DRDO in Solid State Physics Laboratory (SSPL, New Delhi) for supply of STE3N2 System with plasma source.
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2011-2012
New complex product - Nanolaboratory was developed under the state contract. Application Lab was put into operation.
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